On-line Seminars
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Check back soon for more webcasts in June!
Recent Webcasts
Advanced Measurement Techniques
for OFDM and MIMO Based Systems
Advanced OFDM (Orthogonal Frequency Division Multiplex) technologies impose additional challenges and requirements for testing new wireless communication devices and systems. This paper compares and contrasts traditional single-carrier modulation schemes with multi-carrier OFDM schemes to understand the test equipment and measurement considerations when using modern vector signal generators and analyzers. It covers in detail spectrum, power, and modulation quality measurements and techniques for R&D and high-speed production test applications. The paper covers testing of both SISO (single-input, single-output) and MIMO (multiple-input, multiple-output) communications systems used in 802.11n WLAN, 802.16e mobile-WiMAX Wave 2, which are also applicable to future LTE and UMB cellular standards. Note: This is Part Two of a two-part seminar. See below for Part One: "An Introduction to Orthogonal Frequency Division Multiplex Technology".
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Parallel Wafer Level Reliability (WLR) Basics
This seminar is focused on examining the benefits and tradeoffs associated with parallel test solutions for wafer level reliability (WLR.) WLR tests are commonly used throughout the semiconductor lifecycle from technology development and process integration, to process reliability monitoring. The speed and accuracy of the WLR testing significantly impacts time to market for new designs. Parallel WLR testing provides a tool to significantly accelerate throughput by providing statistically significant samples sooner. Parallel WLR test solutions provide throughput benefits for both traditional and advance WLR measurements.
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An Introduction to Orthogonal Frequency
Division Multiplex Technology
Commercial radio technology has reached a new inflection point. The communications market and the underlying technology that provides voice and data services are evolving to provide higher data rates in the same frequency spectrum to ever more users. This seminar provides an overview of the changes occurring in the RF communications industry and the new technologies being developed: OFDM (Orthogonal Frequency Division Multiplex), OFDMA (Orthogonal Frequency Division Multiple Access), and MIMO (multiple-input, multiple-output). It covers the fundamentals of these new technologies, shows how these technologies are used in the WiMAX and WLAN standards, and discusses the test challenges and new test techniques for these technologies. Note: This is Part One of a two-part seminar. See above for Part Two: "Advanced Measurement Techniques for OFDM and MIMO Based Systems".
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Meet new challenges of semiconductor parameters measurement-ACS Keithley solution
THIS SEMINAR IS PRESENTED IN CHINESE ONLY
With the development of semiconductor foundry step into 45nm process, High-K/ metal gate material are commonly used. Whether test engineers in IC design house or in foundry, they all face more and more big challenges because of the never-ending changes and improvement of the new technologies.
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Semiconductor Capacitance-Voltage (C-V) Testing Fundamentals Webcast
This seminar is designed to introduce the topic of C-V measurements as they relate to semiconductor device and materials characterization. C-V testing is commonly used to determine semiconductor parameters such as doping profiles, density of interface states, threshold voltages, oxide charge, and carrier lifetime. This informative 45-minute seminar is followed by an interactive Q&A (during live broadcast only) where you can ask the presenter for additional insight on this important topic.
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Design Considerations for Maximizing Throughput and Accuracy in Switch/Measure Instrumentation
This seminar offers insights into the speed vs. accuracy trade-offs involved in making multi-channel measurements with a digital multimeter (DMM) and relay switching. We’ll explore the various interactions between these instruments, such as signal errors caused by switching hardware, improper instrument coordination, measurement compensation techniques, and automated scanning.
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"Smart" TDDB Algorithm for Investigating Degradation in
High-κ Gate Stacks Under Constant Voltage Stress
A new "smart" algorithm is developed for automatic monitoring of gate dielectric during Constant Voltage Sweep stressing with interlaced characterization using Stress Induced Leakage Current (SILC). In this approach, SILC data is collected automatically based on changes in measured stress current, and/or time intervals. This fully automated test was implemented using the Keithley 2600 Series SourceMeter, and applied to study degradation of the transistor TiN/HfO2 gate stacks.
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Do More with Pulses: Practical Tips and Methods for Getting the Most from Today's Pulse Generators
New devices and materials are being introduced into product designs, but with these new materials and devices come new challenges for characterization and testing. To address these emerging testing challenges, pulse generators are becoming an important tool. In this seminar you’ll learn how how complex pulsed outputs can be applied in semiconductor, memory technologies, material research and serial data testing.
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Click here to register and view this seminar in Chinese
Understanding the Subtleties of Specifying and
Applying a 6½ -digit DMM
This seminar covers precision test and measurement applications for an emerging class of low cost (<$1000 USD) 6½-digit digital multimeters. Learn how to assemble a testing error budget for various applications for electronic devices and products and then how to select and use an appropriate DMM to satisfy your testing needs. Examples include simple test programming to support automatic acquisition and evaluation of measurement data, as well as basic front panel operation of Keithley’s newest 6½-digit DMM, the Model 2100.
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Click here to register and view this seminar in Chinese
How Dual Channel Pulse Testing Simplifies
Characterizing RF Transistors
RF and higher power transistors suffer from self-heating and/or trapping effects. These effects, also called dispersion, result in a non-linear response at higher signals. To model the non-linear behavior properly, large signal characterization must be performed. Using pulse IV techniques to characterize the large signal behavior is popular because the interpretation of results leverages existing DC analysis and understanding.
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Archived Webcasts
General Test and Measurement
- Do More with Pulses: Practical Tips and Methods for Getting the Most from Today's Pulse Generators
- Understanding the Subtleties of Specifying and Applying a 6-1/2 digit DMM (Click here to register and view this seminar in Chinese)
- Increasing Functional Test Throughput Using Distributed Processing Techniques
- Reducing Test Time with Distributed Programming in PXI, LXI, TSPTM, and GPIB Hybrid Systems
- Advances in Testing: New Techniques For Reducing Cost of Test
- Easier, Faster, Simpler Bench Top Design Verification
- Understanding Temperature Measurements
- Understanding Measurement Uncertainty
- Understanding the Basics of Switching Systems
- Ethernet-Based Precision Instrumentation, Introductory Course
- DC Voltage Measurements, Introductory Course
Low Level Measurements
- How to Get the Most from Your Low Current Measurement Instruments
- How to Make Accurate Resistance Measurements
- 4 Steps to Precision Measurements
- Reducing Voltage Noise and Error in Challenging Measurements
- How to Make Sensitive DC Measurements
Nanotechnology
- Advanced Particle Beam Methods for Nano-Characterization and Analysis
- In-situ Correlation of Mechanical Properties, deformation Behavior, and Electrical Characteristics of Materials Using Conductive Nanoindentation
- How to Avoid Self-Heating Effects on Nanoscale Devices
- Give Your Microscope a Hand: Characterization of Nano Structures
- Electronic Properties of Zinc-Blende Wurtzite Biphasic Gallium Nitride Nanowires and Nano FETs
- Measurement Needs in Nano-Architectonics
- Making Successful Electrical Measurements on Nanoscale Materials and Devices
- Techniques for Accurate Nanotech Electrical Measurements
Semiconductor
- How Dual Channel Pulse Testing Simplifies Characterizing RF Transistors
- Understanding Advanced Reliability Testing
- RF Device Testing Devices Using Synchronized Pulsed -DC and -RF Signals
- Meeting New Challenges in Wafer Level Reliability Testing using Source Measure Units (SMUs)
- Pulsed Characterization of Advanced CMOS Technologies
- Parallel High Throughput WLR Testing for Advanced Gate Dielectrics
- Automated production RF-CV measurements of advanced gates dielectrics for 65nm node and beyond
- Overcoming Gate Oxide Scaling Challenges in Semi. Reliability Testing
- New Measurement Techniques for Improving Semi. Device Reliability
- Understanding Reliability Testing of Semiconductor Devices
- Tips, Tricks, and Traps for Advanced SMU DC Measurements
- How to Make DC Parametric Measurements