How Dual Channel Pulse Testing Simplifies Characterizing RF Transistors
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How Dual Channel Pulse Testing Simplifies
Characterizing RF Transistors
RF and
higher power transistors suffer from self-heating and/or trapping effects. These effects, also called dispersion, result
in a non-linear response at higher signals.
To model the non-linear behavior properly, large signal characterization
must be performed. Using pulse IV
techniques to characterize the large signal behavior is popular because the
interpretation of results leverages existing DC analysis and understanding.
Intended Audience
- Those interested in pulse I-V
testing of RF or higher power transistors
- Device engineers using III-V
(compound semiconductor) or silicon (LDMOS) to design or test RF or higher
power transistors.
What you will learn:
- Review of large signal analysis
characterization methods
- Explanation of pulse IV test
challenges
- Review of oscillation issues
when performing pulse IV testing of RF Transistors
About the Author:
Pete
Hulbert is a Senior Applications Engineer at Keithley Instruments, Inc. in