Session Three - Realize
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This page contains session and speaker details for the two sessions scheduled for day three of Nano Days Event on April 26, 2007.
SESSION #3
Wednesday, April 26, 2007
SPEAKERS: Mr. Benjamin W. Jacobs & Dr. Virginia M. Ayres, Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI USA
ABSTRACT
Direct two-point and four-point probe measurements of a biphasic gallium nitride nanowire were conducted using a Zyvex Nanomanipulator coupled with a Keithley 4200 Semiconductor Characterization System. The nanomanipulator probes in this four-point probe configuration provided non-invasive coupling to the nanowire for accurate nanowire resistance measurements. Nanowire breakdown investigations in the two-point probe configuration were also conducted, and indicated single-phase electron transport. Current-voltage characteristics of gallium nitride nanowire based field effect transistors were investigated using a Keithley 4200-SCS. All measurements showed high current densities.
SPEAKER BIO
Mr. Jacobs received his BS and MS degrees in Electrical Engineering and BA degree in German Studies from Michigan State University, East Lansing, Michigan. He is currently a Research Assistant working towards his PhD in the Department of Electrical and Computer Engineering, Michigan State University, East Lansing. He is a NASA Graduate Student Researcher Program Fellowship recipient. His research interests include fundamental radiation interactions and resiliency in novel nanomaterials and nanoelectronics, including nanowire- and nanotube-based field effect transistors.
ORGANIZATION INFORMATION
Michigan State University Department of Electrical and Computer Engineering
2120 Engineering
East Lansing, Mi 48824-1226 USA
Phone: 517-355-5066
Fax 517-353-1980
Web: www.egr.msu.edu/ece
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI USA
Electrical engineering became a formal part of Michigan Agricultural College (MAC) in 1909 when the Division of Engineering was established. The new division had four units, including physics and electrical engineering. In 1916, the electrical engineering department was established separate from physics. For a period of time, it was named Electrical Engineering and Systems Science. In 1947, the Electrical Engineering building was built, (now known as the Computer Center) and housed MSU’s first mainframe computer, the MISTIC. In 1998, the department changed its name to Electrical and Computer Engineering. Today, the department consists of approximately 42 full-time faculty members, more than 700 undergraduate students in electrical and computer engineering, and more than 160 graduate students.
SPEAKER: Dr. Kang L. Wang, FCRP Center on Functional Engineered Nano Architectonics (FENA) & NRI - Western Institute of Nanoelectronics (WIN), Los Angeles, CA USA
ABSTRACT
The art of orchestrating a new paradigm beyond conventional scalable CMOS for functional throughput is the ultimate challenge facing nanoelectronics. New solutions that take advantage of clever functional materials, self assembly processes, low dissipation nanoscale devices and architectures are just some elements that need to be considered to meet the grand challenge—maintaining Moore’s Law beyond the roadmap. Most advances in nanoelectronics have been based on the conventional state variable, electron-charge. Electron-charge can be considered as a variable that is able to alter between various states of population (charging/discharging of capacitance). The impetus in going beyond the traditional charge-based state variable is motivated by the semiconductor industry’s economic need to continue fulfilling exponential rates of performance and productivity. Advances in material science, emerging nanodevices, nanostructures and architectures have provided hope that alternative state variables based on new nanomaterials and nanodevices may indeed be plausible. This presentation will discuss the nanoelectronics challenge beyond CMOS, look into some new material advances and devices from the FENA and WIN centers, and also touch on the measurement needs in nanoelectronics and nanoarchitectonics in light of low signal measurement of random telegraph signals and alternate state variables such as single spin, domain spin and spin waves which makes up the interesting field of spintronics.
SPEAKER BIO
Kang L. Wang received his BS (1964) degree from National Cheng Kung University and his MS (1966) and PhD (1970) degrees from the Massachusetts Institute of Technology. From 1970 to 1972, he was an Assistant Professor at MIT. From 1972 to 1979, he worked at the General Electric Corporate Research and Development Center as a physicist/engineer. In 1979, he joined the Electrical Engineering Department of the University of California, Los Angeles (UCLA), where he is a Professor. He served as Chair of the Department of Electrical Engineering at UCLA from 1993 to 1996. His research activities include semiconductor nano devices, and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum dot arrays Si-based molecular beam epitaxy, quantum structures and devices; nano-epitaxy of hetero-structures; spintronics materials and devices; electron spin and coherence properties of SiGe and InAs quantum structures for implementation of spin-based quantum information; microwave devices. He was the inventor of strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He has held more than 15 patents and published more than 300 papers. He received many awards, including Guggenheim Fellow; IEEE Fellow; TSMC Honor Lectureship Award; Honoris Causa at Politechnico University, Torino, Italy; Semiconductor Research Corporation Inventor Awards; European Material Research Society Meeting Best Paper award; and the Semiconductor Research Corporation Technical Excellence Achievement Award. He is a leader in nanotechnology and nanoelectronics. He serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific publishers). He currently also serves as the Director of Marco Focus Center on Functional Engineered Nano Architectonics (FENA), an interdisciplinary Research Center funded by Semiconductor Industry Association and Department of Defense to address the need of information processing technology beyond scaled CMOS. The Center involves 15 universities across the nation with 42 participating faculty members. He was also named the Director of the newly established Western Institute of Nanoelectronics (WIN), a coordinated multi-project Research Institute. WIN is funded by NRI, Intel, and the State of California. The current on-going projects are aimed at spintronics for low power applications. He was also the founding director of Nanoelectronics Research Facility at UCLA (established in 1989) with the infrastructure to further research in nanotechnology. In addition to these technical leadership contributions, he has provided academic leadership in engineering education. He was also the Dean of Engineering from 2000 to 2002 at the Hong Kong University of Science and Technology.
ORGANIZATION INFORMATION
FCRP Center on Functional Engineered Nano Architectonics (FENA)
UCLA Boelter Hall, Room 5289
Box 1594, Los Angeles, CA, 90095-1594
Phone: (310) 794 9819
Fax: (310) 825 8621
Web: www.fena.org
TThe Center on Functional Engineered Nano Architectonics (FENA) aims to create and investigate new nano-engineered functional materials and devices, and novel structural and computational architectures for new information processing systems beyond the limits of conventional CMOS technology. FENA is made up of 42 faculty and upwards of 80 students at more than 15 highly distinguished US universities. FENA embraces the current opportunity to create and explore the next generation of nanoscale semiconductor technology to the borders of ultimate CMOS and beyond: inventing the heterogeneous interfaces of new nanosystems, enabling a combination of biological and molecular functions, exploring new measurement and nanoscale metrology and revolutionizing the paradigms of information processing and sensing. These new nanostructured materials will provide the basis for the continued expansion of the semiconductor industry and the creation of new applications of monolithically integrated (CMOS, spintronics molecular and biomolecular) nanosystems. FENA’s high impact, high risk, and long-term (>15 years) agenda makes it a unique research center. Its focused mission and objective is in line with the critical nanomaterial challenges highlighted in the International Technology Roadmap for Semiconductors (ITRS) and those facing today’s semiconductor industry. UCLA is the lead institution, with Prof Kang Wang serving as the FENA Director. The center is funded by participating SIA member companies and the Department of Defense via DARPA.
NRI - Western Institute of Nanoelectronics (WIN)
WIN - UCLA Boelter Hall, Room 5289
Box 1594 , Los Angeles, CA, 90095-1594
Phone: (310) 794 9819
Fax: (310) 825 8621
Web: http://win-nano.org
WIN aims to be the leading nanoelectronics research Institute able to support the semiconductor, aerospace & defense, health care, biotechnology and telecommunication industries. One major effort underway is research focusing on next generation nanoelectronic systems. Nanoelectronic systems beyond CMOS must meet the following major challenges: to continue scaling with low power dissipation, high functional throughput, and to achieve robustness with fault tolerance in nanosystems. WIN is taking the research lead in addressing power dissipation, by examining alternate state variables other than the use of electron charge. In particular, spin appears of interest for a number of reasons including new functionalities, potentially lower power dissipation and potentially greater noise immunity. Our research is a holistic approach to spintronics, in terms of understanding device performance, device-device interactions and benchmarking performance to more conventional devices such as CMOS. Currently, four Californian institutes participate in WIN: these are UC Berkeley, UCLA, UCSB, and Stanford, with more than 20 faculty and 30 students participating, making it the largest single research effort worldwide in area of spintronics. UCLA is the lead institution with Prof Kang Wang serving as the WIN Director.
Wednesday, April 26, 2007
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NANO DAYS EVENT REGIONAL SCHEDULE AND REGISTRATION
Please use the regional schedule and registration pages for your region, to sign up for the seminars that your are interested in attending. AMERICAS | EUROPE | ASIA |
Seminar #5:
TITLE: Electronic Properties of Zinc-Blende Wurtzite Biphasic Gallium Nitride Nanowires and NanoFETsSPEAKERS: Mr. Benjamin W. Jacobs & Dr. Virginia M. Ayres, Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI USA
ABSTRACT
Direct two-point and four-point probe measurements of a biphasic gallium nitride nanowire were conducted using a Zyvex Nanomanipulator coupled with a Keithley 4200 Semiconductor Characterization System. The nanomanipulator probes in this four-point probe configuration provided non-invasive coupling to the nanowire for accurate nanowire resistance measurements. Nanowire breakdown investigations in the two-point probe configuration were also conducted, and indicated single-phase electron transport. Current-voltage characteristics of gallium nitride nanowire based field effect transistors were investigated using a Keithley 4200-SCS. All measurements showed high current densities.
SPEAKER BIO
Mr. Jacobs received his BS and MS degrees in Electrical Engineering and BA degree in German Studies from Michigan State University, East Lansing, Michigan. He is currently a Research Assistant working towards his PhD in the Department of Electrical and Computer Engineering, Michigan State University, East Lansing. He is a NASA Graduate Student Researcher Program Fellowship recipient. His research interests include fundamental radiation interactions and resiliency in novel nanomaterials and nanoelectronics, including nanowire- and nanotube-based field effect transistors.
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Dr. Ayres earned her PhD and MS in Physics from Purdue University, and two BAs in Physics and in Biophysics from Johns Hopkins University. Dr. Ayres is currently an Associate Professor in the Department of Electrical & Computer Engineering at Michigan State University. Her research interests are in nanobiology and nanoelectronics and scanning probe microscopies. Dr. Ayres is the recipient of two NASA Faculty Fellowship Awards, two NSF Outstanding Performance Awards, and two international awards from the Japan Society for Promotion of Science and from Tokyo Institute of Technology for research and education in Japan. |
ORGANIZATION INFORMATION
Michigan State University Department of Electrical and Computer Engineering
2120 Engineering
East Lansing, Mi 48824-1226 USA
Phone: 517-355-5066
Fax 517-353-1980
Web: www.egr.msu.edu/ece
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI USA
Electrical engineering became a formal part of Michigan Agricultural College (MAC) in 1909 when the Division of Engineering was established. The new division had four units, including physics and electrical engineering. In 1916, the electrical engineering department was established separate from physics. For a period of time, it was named Electrical Engineering and Systems Science. In 1947, the Electrical Engineering building was built, (now known as the Computer Center) and housed MSU’s first mainframe computer, the MISTIC. In 1998, the department changed its name to Electrical and Computer Engineering. Today, the department consists of approximately 42 full-time faculty members, more than 700 undergraduate students in electrical and computer engineering, and more than 160 graduate students.
Seminar #6
TITLE: Measurement Needs in Nano-ArchitectonicsSPEAKER: Dr. Kang L. Wang, FCRP Center on Functional Engineered Nano Architectonics (FENA) & NRI - Western Institute of Nanoelectronics (WIN), Los Angeles, CA USA
ABSTRACT
The art of orchestrating a new paradigm beyond conventional scalable CMOS for functional throughput is the ultimate challenge facing nanoelectronics. New solutions that take advantage of clever functional materials, self assembly processes, low dissipation nanoscale devices and architectures are just some elements that need to be considered to meet the grand challenge—maintaining Moore’s Law beyond the roadmap. Most advances in nanoelectronics have been based on the conventional state variable, electron-charge. Electron-charge can be considered as a variable that is able to alter between various states of population (charging/discharging of capacitance). The impetus in going beyond the traditional charge-based state variable is motivated by the semiconductor industry’s economic need to continue fulfilling exponential rates of performance and productivity. Advances in material science, emerging nanodevices, nanostructures and architectures have provided hope that alternative state variables based on new nanomaterials and nanodevices may indeed be plausible. This presentation will discuss the nanoelectronics challenge beyond CMOS, look into some new material advances and devices from the FENA and WIN centers, and also touch on the measurement needs in nanoelectronics and nanoarchitectonics in light of low signal measurement of random telegraph signals and alternate state variables such as single spin, domain spin and spin waves which makes up the interesting field of spintronics.
SPEAKER BIO
Kang L. Wang received his BS (1964) degree from National Cheng Kung University and his MS (1966) and PhD (1970) degrees from the Massachusetts Institute of Technology. From 1970 to 1972, he was an Assistant Professor at MIT. From 1972 to 1979, he worked at the General Electric Corporate Research and Development Center as a physicist/engineer. In 1979, he joined the Electrical Engineering Department of the University of California, Los Angeles (UCLA), where he is a Professor. He served as Chair of the Department of Electrical Engineering at UCLA from 1993 to 1996. His research activities include semiconductor nano devices, and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum dot arrays Si-based molecular beam epitaxy, quantum structures and devices; nano-epitaxy of hetero-structures; spintronics materials and devices; electron spin and coherence properties of SiGe and InAs quantum structures for implementation of spin-based quantum information; microwave devices. He was the inventor of strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He has held more than 15 patents and published more than 300 papers. He received many awards, including Guggenheim Fellow; IEEE Fellow; TSMC Honor Lectureship Award; Honoris Causa at Politechnico University, Torino, Italy; Semiconductor Research Corporation Inventor Awards; European Material Research Society Meeting Best Paper award; and the Semiconductor Research Corporation Technical Excellence Achievement Award. He is a leader in nanotechnology and nanoelectronics. He serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific publishers). He currently also serves as the Director of Marco Focus Center on Functional Engineered Nano Architectonics (FENA), an interdisciplinary Research Center funded by Semiconductor Industry Association and Department of Defense to address the need of information processing technology beyond scaled CMOS. The Center involves 15 universities across the nation with 42 participating faculty members. He was also named the Director of the newly established Western Institute of Nanoelectronics (WIN), a coordinated multi-project Research Institute. WIN is funded by NRI, Intel, and the State of California. The current on-going projects are aimed at spintronics for low power applications. He was also the founding director of Nanoelectronics Research Facility at UCLA (established in 1989) with the infrastructure to further research in nanotechnology. In addition to these technical leadership contributions, he has provided academic leadership in engineering education. He was also the Dean of Engineering from 2000 to 2002 at the Hong Kong University of Science and Technology.
ORGANIZATION INFORMATION
FCRP Center on Functional Engineered Nano Architectonics (FENA)
UCLA Boelter Hall, Room 5289
Box 1594, Los Angeles, CA, 90095-1594
Phone: (310) 794 9819
Fax: (310) 825 8621
Web: www.fena.org
TThe Center on Functional Engineered Nano Architectonics (FENA) aims to create and investigate new nano-engineered functional materials and devices, and novel structural and computational architectures for new information processing systems beyond the limits of conventional CMOS technology. FENA is made up of 42 faculty and upwards of 80 students at more than 15 highly distinguished US universities. FENA embraces the current opportunity to create and explore the next generation of nanoscale semiconductor technology to the borders of ultimate CMOS and beyond: inventing the heterogeneous interfaces of new nanosystems, enabling a combination of biological and molecular functions, exploring new measurement and nanoscale metrology and revolutionizing the paradigms of information processing and sensing. These new nanostructured materials will provide the basis for the continued expansion of the semiconductor industry and the creation of new applications of monolithically integrated (CMOS, spintronics molecular and biomolecular) nanosystems. FENA’s high impact, high risk, and long-term (>15 years) agenda makes it a unique research center. Its focused mission and objective is in line with the critical nanomaterial challenges highlighted in the International Technology Roadmap for Semiconductors (ITRS) and those facing today’s semiconductor industry. UCLA is the lead institution, with Prof Kang Wang serving as the FENA Director. The center is funded by participating SIA member companies and the Department of Defense via DARPA.
NRI - Western Institute of Nanoelectronics (WIN)
WIN - UCLA Boelter Hall, Room 5289
Box 1594 , Los Angeles, CA, 90095-1594
Phone: (310) 794 9819
Fax: (310) 825 8621
Web: http://win-nano.org
WIN aims to be the leading nanoelectronics research Institute able to support the semiconductor, aerospace & defense, health care, biotechnology and telecommunication industries. One major effort underway is research focusing on next generation nanoelectronic systems. Nanoelectronic systems beyond CMOS must meet the following major challenges: to continue scaling with low power dissipation, high functional throughput, and to achieve robustness with fault tolerance in nanosystems. WIN is taking the research lead in addressing power dissipation, by examining alternate state variables other than the use of electron charge. In particular, spin appears of interest for a number of reasons including new functionalities, potentially lower power dissipation and potentially greater noise immunity. Our research is a holistic approach to spintronics, in terms of understanding device performance, device-device interactions and benchmarking performance to more conventional devices such as CMOS. Currently, four Californian institutes participate in WIN: these are UC Berkeley, UCLA, UCSB, and Stanford, with more than 20 faculty and 30 students participating, making it the largest single research effort worldwide in area of spintronics. UCLA is the lead institution with Prof Kang Wang serving as the WIN Director.
