Why Choose a Keithley Low level Instrument to
Characterize Graphene-Based Materials and Devices?
Keithley provides the most precise and sensitive measurements in the industry. |
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Low resistance |
10nΩ |
Low current |
50aA |
Low voltage |
1nV |
High resistance |
1018Ω |
Ultra-high input impedance |
>200 x 1012Ω |
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"Graphene Makes 'Supercapacitor'."
The Institute of Physics. September 23, 2010.
The first AC supercapacitors containing graphene electrodes have been made. These devices have an operating frequency over 5000Hz.
"World Record with High-Speed Graphene Transistors"
University of California. September 14, 2010.
Graphene transistors with a 300GHz cutoff frequency have been developed. They were fabricated with a new process that uses a nanowire as the self-aligned gate.
"Turning Down the Noise in Graphene."
Lawrence Berkeley National Laboratory. August 6, 2010.
A graphene noise model has been developed. It shows noise patterns opposite to those of other electronic materials. The model is of the signal-to-noise ratios for low frequency noises in graphene on a silica substrate.
"Graphene Shows Promise."
Martin Rowe.
Test & Measurement World. August 1, 2010.
Researchers discover many interesting and useful properties of graphene. They believe it is possible that graphene may replace silicon in many applications.
"Graphene Under Strain Creates Gigantic Pseudo-Magnetic Fields."
Paul Preuss. Lawrence Berkeley
National Laboratory. July 29, 2010.
When graphene on a platinum substrate is strained and develops nanobubbles, its electrons behave as if they were in a magnetic field. The pseudo-magnetic fields created were stronger than any magnetic field ever generated in a laboratory.
"Electric Field Effect in Atomically Thin Carbon Films."
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov.
Science, Vol. 306. no. 5696. October 2, 2004.
One of the original papers that describes the existence of graphene, the existence of the electric field effect in graphene, and the high electron mobility of graphene.
"The Electronic Properties of Graphene."
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim.
Boston University, Instituto de Ciencia de Materiales de Madrid, Universidade do Minho, and University of Manchester. Review of Modern Physics, Volume 81. January 14, 2009.
The basic theoretical aspects of pure carbon graphene are presented.
"Quantum Resistance Metrology in Graphene."
A. J. M. Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, and J. C. Maan.
Radboud University Nijmegen, NMi Van Swinden Laboratorium, and University of Manchester. October 22, 2008.
The authors suggest that quantum Hall effect measurements on graphene can be used as a resistance metrology standard.
"The Rise of Graphene."
A. K. Geim and K. S. Novoselov.
University of Manchester. Nature Materials. 2007.
An overview of graphene and the reasons graphene has generated such interest.