Keithley Instruments Inc. - SR/087: How Dual Channel Pulse Testing Simplifies Characterizing RF Transistors

SR/087: How Dual Channel Pulse Testing Simplifies Characterizing RF Transistors

RF and higher power transistors suffer from self-heating and/or trapping effects. These effects, also called dispersion, result in a non-linear response at higher signals. To model the non-linear behavior properly, large signal characterization must be performed. Using pulse IV techniques to characterize the large signal behavior is popular because the interpretation of results leverages existing DC analysis and understanding.

Target Audience:

Those interested in pulse I-V testing of RF or higher power transistors
Device engineers using III-V (compound semiconductor) or silicon (LDMOS) to design or test RF or higher power transistors.

What you will learn:

Review of large signal analysis characterization methods
Explanation of pulse IV test challenges
Review of oscillation issues when performing pulse IV testing of RF Transistors

Speaker: Pete Hulbert
Pete Hulbert is a Senior Applications Engineer at Keithley Instruments, Inc. in Cleveland. Previous experience includes application engineering and technical marketing in the semiconductor industry. He earned his BS degree from Washington State University.

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