This seminar was a part of Nano Days held in April 2007 that included various Keithley partner companies presenting on the topic of nanotechnology. This seminar includes 2 presentations, each being approximately 30 minutes in length.

ABSTRACT
Direct two-point and four-point probe measurements of a biphasic gallium nitride nanowire were conducted using a Zyvex Nanomanipulator coupled with a Keithley 4200 Semiconductor Characterization System. The nanomanipulator probes in this four-point probe configuration provided non-invasive coupling to the nanowire for accurate nanowire resistance measurements. Nanowire breakdown investigations in the two-point probe configuration were also conducted, and indicated single-phase electron transport. Current-voltage characteristics of gallium nitride nanowire based field effect transistors were investigated using a Keithley 4200-SCS. All measurements showed high current densities.

SPEAKER BIO
Mr. Jacobs received his BS and MS degrees in Electrical Engineering and BA degree in German Studies from Michigan State University, East Lansing, Michigan. He is currently a Research Assistant working towards his PhD in the Department of Electrical and Computer Engineering, Michigan State University, East Lansing. He is a NASA Graduate Student Researcher Program Fellowship recipient. His research interests include fundamental radiation interactions and resiliency in novel nanomaterials and nanoelectronics, including nanowire- and nanotube-based field effect transistors.

Dr. Ayres earned her PhD and MS in Physics from Purdue University, and two BAs in Physics and in Biophysics from Johns Hopkins University. Dr. Ayres is currently an Associate Professor in the Department of Electrical & Computer Engineering at Michigan State University. Her research interests are in nanobiology and nanoelectronics and scanning probe microscopies. Dr. Ayres is the recipient of two NASA Faculty Fellowship Awards, two NSF Outstanding Performance Awards, and two international awards from the Japan Society for Promotion of Science and from Tokyo Institute of Technology for research and education in Japan.

ORGANIZATION INFORMATION
Michigan State University Department of Electrical and Computer Engineering
2120 Engineering
East Lansing, Mi 48824-1226 USA
Phone: 517-355-5066
Fax 517-353-1980
Web: www.egr.msu.edu/ece

Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI USA Electrical engineering became a formal part of Michigan Agricultural College (MAC) in 1909 when the Division of Engineering was established. The new division had four units, including physics and electrical engineering. In 1916, the electrical engineering department was established separate from physics. For a period of time, it was named Electrical Engineering and Systems Science. In 1947, the Electrical Engineering building was built, (now known as the Computer Center) and housed MSU’s first mainframe computer, the MISTIC. In 1998, the department changed its name to Electrical and Computer Engineering. Today, the department consists of approximately 42 full-time faculty members, more than 700 undergraduate students in electrical and computer engineering, and more than 160 graduate students.

ABSTRACT
The art of orchestrating a new paradigm beyond conventional scalable CMOS for functional throughput is the ultimate challenge facing nanoelectronics. New solutions that take advantage of clever functional materials, self assembly processes, low dissipation nanoscale devices and architectures are just some elements that need to be considered to meet the grand challenge—maintaining Moore’s Law beyond the roadmap. Most advances in nanoelectronics have been based on the conventional state variable, electron-charge. Electron-charge can be considered as a variable that is able to alter between various states of population (charging/discharging of capacitance). The impetus in going beyond the traditional charge-based state variable is motivated by the semiconductor industry’s economic need to continue fulfilling exponential rates of performance and productivity. Advances in material science, emerging nanodevices, nanostructures and architectures have provided hope that alternative state variables based on new nanomaterials and nanodevices may indeed be plausible. This presentation will discuss the nanoelectronics challenge beyond CMOS, look into some new material advances and devices from the FENA and WIN centers, and also touch on the measurement needs in nanoelectronics and nanoarchitectonics in light of low signal measurement of random telegraph signals and alternate state variables such as single spin, domain spin and spin waves which makes up the interesting field of spintronics.

SPEAKER BIO
Kang L. Wang received his BS (1964) degree from National Cheng Kung University and his MS (1966) and PhD (1970) degrees from the Massachusetts Institute of Technology. From 1970 to 1972, he was an Assistant Professor at MIT. From 1972 to 1979, he worked at the General Electric Corporate Research and Development Center as a physicist/engineer. In 1979, he joined the Electrical Engineering Department of the University of California, Los Angeles (UCLA), where he is a Professor.

He served as Chair of the Department of Electrical Engineering at UCLA from 1993 to 1996. His research activities include semiconductor nano devices, and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum dot arrays Si-based molecular beam epitaxy, quantum structures and devices; nano-epitaxy of hetero-structures; spintronics materials and devices; electron spin and coherence properties of SiGe and InAs quantum structures for implementation of spin-based quantum information; microwave devices. He was the inventor of strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He has held more than 15 patents and published more than 300 papers. He received many awards, including Guggenheim Fellow; IEEE Fellow; TSMC Honor Lectureship Award; Honoris Causa at Politechnico University, Torino, Italy; Semiconductor Research Corporation Inventor Awards; European Material Research Society Meeting Best Paper award; and the Semiconductor Research Corporation Technical Excellence Achievement Award.

He is a leader in nanotechnology and nanoelectronics. He serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific publishers). He currently also serves as the Director of Marco Focus Center on Functional Engineered Nano Architectonics (FENA), an interdisciplinary Research Center funded by Semiconductor Industry Association and Department of Defense to address the need of information processing technology beyond scaled CMOS. The Center involves 15 universities across the nation with 42 participating faculty members. He was also named the Director of the newly established Western Institute of Nanoelectronics (WIN), a coordinated multi-project Research Institute.

WIN is funded by NRI, Intel, and the State of California. The current on-going projects are aimed at spintronics for low power applications. He was also the founding director of Nanoelectronics Research Facility at UCLA (established in 1989) with the infrastructure to further research in nanotechnology. In addition to these technical leadership contributions, he has provided academic leadership in engineering education. He was also the Dean of Engineering from 2000 to 2002 at the Hong Kong University of Science and Technology.